sF10L60U 6 00v 10a copyright & copy;2000 shindengen electric mfg.co.ltd outline dimensions unit : mm ratings shindengen case : fto-220 ??absolute maximum ratings (if not specified tc=25??) item symbol conditions ratings unit storage temperature tstg -55?`150 ?? operating junction temperature tj 150 ?? peak reverse voltage v rm 600 v average rectified forward current i o 50hz sine wave, resistance load, tc=85?? 10 a peak surge forward current i fsm 50hz sine wave, non-repetitive 1 cycle peak value, tj=25?? 120 a dielectric strength vdis terminals to case, ac 1 minute 2 kv mounting torque tor (recommended torque) 0.5(0.3) n?em ??electrical characteristics (if not specified tc=25??) item symbol conditions ratings unit forward voltage v f i f =10a, pulse measurement max.3.0 v reverse current i r v r =v rm , pulse measurement max.25 ?a junction capacitance cj f=1mhz, vr=10v typ.55 pf reverse recovery time trr i f =0.5a, i r =1a max.25 ns thermal resistance ??jc junction to case max.2.0 ??/w super fast recovery rectifiers single
forward voltage 0 1 2 3 4 5 6 0.1 1 10 100 sF10L60U tc=150 c [max] tc=25 c [max] pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a]
0 t p i o t d=t p /t 0 10 20 30 40 50 0 2 4 6 8 10 12 14 16 sF10L60U 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w]
0 t p i o t d=t p /t 0 20 40 60 80 100 120 140 160 0 5 10 15 20 sF10L60U 0.3 derating curve v r = v rm sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r case temperature tc [ c] average rectified forward current i o [a]
peak surge forward capability 0 50 100 150 200 1 10 100 sF10L60U 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied
junction capacitance 1 10 100 sF10L60U 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tc=25 c typ per diode
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